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| Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description The AZ358/358C consists of two independent, high gain and internally frequency compensated operational amplifiers, it is specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. The AZ358/358C series are Compatible with Industry standard 358. AZ358C has more stringent input offset voltage than AZ358. The AZ358/358C series are available in standard packages of DIP-8 and SOIC-8. AZ358/358C Features * * * * * * Internally Frequency Compensated for Unity Gain Large Voltage Gain: 100dB (Typical) Low Input Bias Current: 20nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current: 0.5mA (Typical) Wide Power Supply Voltage Range: Single Supply: 3V to 18V Dual Supplies: 1.5V to 9V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: 0V to VCC-1.5V Power Drain Suitable for Battery Operation * * * Applications * * * Battery Charger Cordless Telephone Switching Power Supply SOIC-8 DIP-8 Figure 1. Package Types of AZ358/358C Aug. 2006 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Pin Configuration AZ358/358C M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 INPUT 1INPUT 1+ GND 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+ Figure 2. Pin Configuration of AZ358/358C (Top View) Functional Block Diagram VCC 6A 4A 100A Q5 Q6 Q2 INPUTQ1 Q3 Q4 Rsc OUTPUT INPUT+ Q11 Q10 Q8 Q9 Q12 50A Q13 Cc Q7 Figure 3. Functional Block Diagram of AZ358/358C (Each Amplifier) Aug. 2006 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Ordering Information AZ358/358C AZ358 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Circuit Type Blank: AZ358 C: AZ358C Package M: SOIC-8 P: DIP-8 Package Input Offset Voltage 5mV Part Number Tin Lead AZ358M AZ358MTR AZ358CM AZ358CMTR AZ358P AZ358CP Lead Free AZ358M-E1 AZ358MTR-E1 AZ358CM-E1 AZ358CMTR-E1 AZ358P-E1 AZ358CP-E1 Marking ID Tin Lead AZ358M AZ358M 358CM 358CM AZ358P AZ358CP Lead Free AZ358M-E1 AZ358M-E1 358CM-E1 358CM-E1 AZ358P-E1 AZ358CP-E1 Packing Type Tube Tape & Reel Tube Tape & Reel Tube Tube SOIC-8 Maximum Value 5mV 3mV 3mV DIP-8 Maximum Value 5mV 3mV BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Aug. 2006 Rev. 1. 2 3 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Differential Input Voltage Input Voltage Input Current (VIN<-0.3V) (Note 2) Output Short Circuit to Ground (One Amplifier) (Note 3) VCC 12V and TA = 25oC Power Dissipation (TA=25oC) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) AZ358/358C Symbol VCC VID VIC IIN Value 20 20 -0.3 to 20 50 Continuous DIP-8 SOIC-8 150 -65 to 150 260 Unit V V V mA PD TJ TSTG TLEAD 830 550 mW oC oC oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device under these conditions is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the VCC voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3V (at 25oC) Note 3: Short circuits from the output to VCC can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40mA independent of the magnitude of VCC. At values of supply voltage in excess of +12V, continuous short circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. Recommended Operating Conditions Parameter Supply Voltage Ambient Operating Temperature Range Symbol VCC TA Min 3 -40 Max 18 85 Unit V oC Aug. 2006 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics VCC=5V, GND=0, TA=25oC unless otherwise specified. Parameter Input Offset Voltage Input Bias Current (Note 4) Input Offset Current Input Common Mode Voltage Range (Note 5) Supply Current Large Signal Voltage Gain Common Mode Rejection Ratio Power Supply Rejection Ration Channel Separation (Note 6) Source Output Current Sink Output Short Ground Circuit to Symbol VIO IBIAS IIO VIR ICC GV CMRR PSRR CS ISOURCE ISINK Test Conditions VO=1.4V, RS=0, VCC=5V to 15V IIN+ or IIN-, VCM=0V IIN+-IIN-, VCM=0V VCC=15V RL=, Over full temperature VCC=15V range on all OP Amps VCC=5V VCC=15V, RL2, VO=1V to 11V VCM=0V to (VCC-1.5)V VCC=5V to 15V f=1KHz to 20KHz VIN+=1V, VIN-=0V, VCC=15V, VO=2V VIN+=0V, VIN-=1V, VCC=15V, VO=2V VIN+=0V, VIN-=1V, VCC=15V, VO=0.2V ISC VOH Output Voltage Swing VOL VCC=15V VCC=15V, RL=2K VCC=15V, RL=10K VCC=5V, RL=10K 12 12.5 13.5 5 20 V mV 20 10 12 85 70 70 0 0.7 0.5 100 90 90 -120 40 18 50 40 60 AZ358 AZ358C Min Typ 2 2 20 5 Max 5 3 200 50 VCC-1.5 AZ358/358C Unit mV nA nA V 1.5 1.2 mA dB dB dB dB mA mA A mA Note 4: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the input lines. Note 5: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or both inputs can go to +18V without damages, independent of the magnitude of the VCC. Note 6: Due to proximity of external components, insure that coupling is not originating via stray capacitors between these external parts. This typically can be detected as this type of capacitance increases at higher frequencies. Aug. 2006 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics AZ358/358C 8 7 30 25 6 Input Voltage (VDC) 5 4 Input Current (nA) NEGATIVE 20 VCC=15V 15 POSITIVE 3 2 1 0 0 2 4 6 8 10 5 0 -40 -20 0 20 40 60 80 100 120 Power Supply Voltage (VDC) Temperature (oC) Figure 4. Input Voltage Range Figure 5. Input Current 4.0 3.5 120 Supply Current Drain (mA) 110 VCC 3.0 mA A ID 100 Voltage Gain (dB) 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 90 RL=2K RL=20K 80 TA:0 C TO 85 C o o 70 60 0 2 4 6 8 10 12 14 16 18 20 Power Supply Voltage (V) Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain Aug. 2006 Rev. 1. 2 6 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AZ358/358C 110 90 80 Voltage Gain (dB) 70 60 R 10M 50 0.1uF 30 20 10 0 1HZ VIN VCC/2 10HZ 100HZ 1kHZ 10kHZ 100kHZ 1MHZ Input Voltage (V) 40 VCC VO Output Voltage (V) 100 VCC: 10V TO 15VDC TA: -40 C TO 85 C o o VCC =15V RL = 2K Frequency (Hz) Time (S) Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response 20 VOUT R 100K TA = 25oC Output Voltage (mV) VCC = 15V VIN 50pF R 1K +15 VDC VO Output Swing (VP-P) 15 VIN +7VDC R 2K Input Output 10 5 0 1K 10K 100K 1000K Time (S) Frequency (Hz) Figure 10. Voltage Follower Pulse Response (Small Signal) Figure 11. Large Signal Frequency Response Aug. 2006 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AZ358/358C 8 10 Output Voltage Referenced to VCC (V) 7 TA = 25 C o 6 VCC/2 VO Output Voltage (V) VCC 1 5 IO VCC=5V 4 VCC 0.1 VCC=15V VCC/2 3 Independent of VCC TA = 25 C o IO Vo 2 1 1E-3 0.01 0.1 1 10 100 0.01 1E-3 0.01 0.1 1 10 100 Output Source Current (mA) Output Sink Current (mA) Figure 12. Output Characteristics Current Sourcing Figure 13. Output Characteristics Current Sinking 100 90 80 IO Output Current (mA) 70 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 Temperature (oC) Figure 14. Current Limiting Aug. 2006 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Application R1 AZ358/358C Opto Isolator - R6 1/2 AZ358/C AC Line SMPS + GND R7 Battery Pack R3 R4 R5 Current R2 Sense - VCC 1/2 AZ358/C + AZ431 GND R8 Figure 15. Battery Charger R1 910K +V1 R1 100K + R2 100K R3 100K R5 1/2 AZ358/C 100K R6 100K VO R2 100K 1/2 AZ358/C R3 91K VIN(+) + RL +V3 +V4 R4 100K VCC +V2 Figure 16. Power Amplifier Figure 17. DC Summing Amplifier Aug. 2006 Rev. 1. 2 9 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Application (Continued) AZ358/358C R1 100k C1 0.1F R2 1M + 2V - VCC + 2V - 1/2 AZ358/C + R3 2K R1 2K R2 CO RB 6.2k R4 100k VCC R5 100k AV=1+R2/R1 VO RL 10k 1/2 AZ358/C + R4 3K I1 1mA I2 CIN AC R3 1M C2 10F AV=11 (As shown) Figure 18. AC Coupled Non-Inverting Amplifier Figure 19. Fixed Current Sources R1 1M C1 0.01F 0.001F R2 100K VO VIN R1 16K R2 16K + C2 0.01F 1/2 AZ358/C R3 100k VO 1/2 AZ358/C + R3 100K VCC R4 100 K 0 R5 100K V0 f0 R4 100k fo=1KHz Q=1 AV=2 Figure 20. Pulse Generator Figure 21. DC Coupled Low-Pass Active Filter Aug. 2006 Rev. 1. 2 10 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions DIP-8 Unit: mm(inch) AZ358/358C 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6 6 5 3.710(0.146) 4.310(0.170) 4 3.200(0.126) 3.600(0.142) 4 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Aug. 2006 Rev. 1. 2 11 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AZ358/358C 4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) Aug. 2006 Rev. 1. 2 12 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 |
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